Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3598393
Reference18 articles.
1. Bonding structure and characteristics of defects of near‐stoichiometric silicon nitride films
2. Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
3. Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films
4. Observation of multiple silicon dangling bond configurations in silicon nitride
5. Electrically neutral nitrogen dangling‐bond defects in amorphous hydrogenated silicon nitride thin films
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1. Charge Transport Mechanism in the Forming-Free Memristor Based on PECVD Silicon Oxynitride;Electronics;2023-01-25
2. Short-range order and charge transport in silicon-rich pyrolytic silicon oxynitride;Journal of Non-Crystalline Solids;2023-01
3. High-Temperature Spin Qubit in Silicon Tunnel Field-Effect Transistors;Quantum Science and Technology;2021
4. Electrically tunable electroluminescence from SiNx-based light-emitting devices;Optics Express;2012-07-16
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