Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source

Author:

Biswas Jyoti1ORCID,Cultrera Luca1ORCID,Liu Wei1ORCID,Wang Erdong1ORCID,Skaritka John1,Kisslinger Kim1ORCID,Hawkins S. D.2ORCID,Lee S. R.2ORCID,Klem J. F.2ORCID

Affiliation:

1. Brookhaven National Laboratory 1 , Upton, New York 11973, USA

2. Sandia National Laboratories 2 , Albuquerque, New Mexico 87185, USA

Abstract

Photocathodes based on GaAs and other III–V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or less. To increase the QE, we fabricated a GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath. This configuration creates a Fabry–Pérot cavity between the DBR and GaAs surface, which enhances the absorption of incident light and, consequently, the QE. These photocathode structures were grown using molecular beam epitaxy and achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.

Funder

Brookhaven National Laboratory

Sandia National Laboratories

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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