Effect of Hydrostatic Pressure on p‐n Junction Characteristics and the Pressure Variation of the Band Gap

Author:

Jayaraman A.,Sikorski M. E.,Irvin J. C.,Yates G. H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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3. A new model of the effect of mechanical stress on the saturation current of bipolar transistors;Sensors and Actuators A: Physical;2002-04

4. Pressure tuning and electronic phenomena;Physica A: Statistical Mechanics and its Applications;1989-03

5. Electron tunneling into Bi thin films under pressure;Journal of Applied Physics;1986-01

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