Inelastic carrier lifetime in bilayer graphene-Reference-Cited by-同舟云学术

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Inelastic carrier lifetime in bilayer graphene

Published:2012-01-16 Issue:3 Volume:100 Page:032106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Cheol-Hwan,Giustino Feliciano,Spataru Catalin D.,Cohen Marvin L.,Louie Steven G.

Funder

U.S. Department of Energy

Office of Naval Research

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3675877

Reference30 articles.

1. The rise of graphene

2. Gate-induced insulating state in bilayer graphene devices

3. Direct observation of a widely tunable bandgap in bilayer graphene

4. Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab initio calculations of low-energy quasiparticle lifetimes in bilayer graphene;Applied Physics Letters;2023-09-11

2. Corbino field-effect transistors in a magnetic field: Highly tunable photodetectors;Physical Review B;2021-10-05

3. Quantum Lifetime Spectroscopy and Magnetotunneling in Double Bilayer Graphene Heterostructures;Physical Review Letters;2021-09-09

4. Indirect electron-phonon interaction leading to significant reduction of thermal conductivity in graphene;Materials Today Physics;2021-05

5. Lifetime and dynamics of polaron and bipolaron in graphene nanoribbon under laser;The European Physical Journal Plus;2020-06

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