GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1389482
Reference11 articles.
1. Single-electron transistors: Electrostatic analogs of the DC SQUIDS
2. Transport characterization of in‐plane gate devices fabricated by direct epitaxial growth on patterned substrates
3. Single-electron transistors with quantum dots
4. Fabrication and transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy
5. GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits
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2. Formation of InP and InGaAs Air-Hole Arrays on InP(111) Substrates by Selective-Area Metal–Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2008-05-16
3. Effect of GaAs polycrystal on the size and areal density of InAs quantum dots in selective area molecular beam epitaxy;Journal of Crystal Growth;2006-12
4. The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface;Microelectronics Journal;2006-12
5. Size, areal density and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy;Quantum Dots, Particles, and Nanoclusters III;2006-02-09
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