Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric-Reference-Cited by-同舟云学术

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Published:2015-06-15 Issue:24 Volume:106 Page:243501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gao Tao¹²,Xu Ruimin¹,Kong Yuechan²^ORCID,Zhou Jianjun²,Kong Cen²,Dong Xun²,Chen Tangsheng²

Affiliation:

1. Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731, People's Republic of China

2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922724

Reference17 articles.

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5. T. Palacios , A. Chini , D. Buttari , S. Heikman , S. Keller , S. P. DenBaars , and U. K. Mishra , in 62nd Device Research Conference Digest (2004), p. 41.

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