Evolution of defect-related structure in the x-ray absorption spectra of buried SiNx films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120292
Reference9 articles.
1. Modification of the mechanical properties of ceramic surfaces by energetic ion irradiation
2. On the identification of N dangling bonds in SiN films using x‐ray absorption studies
3. Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)
4. The effect of ion implantation in the microstructure of Si3N4 films: an X-ray absorption study
5. Characterization of stoichiometric surface and buried SiN films fabricated by ion implantation using extended x‐ray absorption fine structure
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1. Long time aging effect on Be-implanted GaN epitaxial layer;AIP Advances;2019-05
2. Modification of the N bonding environment in GaN after high-dose Si implantation: An x-ray absorption study;Journal of Applied Physics;2007-04-15
3. Identification of implantation-induced defects in GaN: A near-edge x-ray absorption fine structure study;Applied Physics Letters;2003-03-10
4. NEXAFS and AFM characterization of Si implanted GaN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-01
5. A parametric study of implantation-induced variations on the mechanical properties of epitaxial GaN;Journal of Physics: Condensed Matter;2002-11-22
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