Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge
Author:
Affiliation:
1. Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213, Japan
Funder
Ministry of Education, Culture, Sports, Science, and Technology, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4930225
Reference46 articles.
1. Springer Handbook of Condensed Matter and Materials Data
2. Strain Effect in Semiconductors
3. Strain-Induced Effects in Advanced MOSFETs
4. Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures
5. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
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