Nonresonant electron capture in GaAs/AlAs/AlGaAs double‐barrier quantum well infrared detectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110955
Reference16 articles.
1. Photoconductive gain mechanism of quantum‐well intersubband infrared detectors
2. The theory of multiple quantum-well GaAs-AlGaAs infrared detectors
3. Large photoconductive gain in quantum well infrared photodetectors
4. Carrier capture into a semiconductor quantum well
5. Ultrafast optical evidence for resonant electron capture in quantum wells
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of carrier lifetimes using Hakki–Paoli gain data;Applied Physics Letters;1998-02-16
2. Voltage-tunable far-infrared photodetector with a very large tuning range;Applied Surface Science;1996-02
3. Field dependence of carrier capture in GaAs/AlAs/AlGaAs double-barrier quantum well structures;Semiconductor Science and Technology;1995-10-01
4. Capture of carriers excited by interband and intersubband absorption in GaAs/AlAs/AlGaAs double-barrier quantum wells;Superlattices and Microstructures;1994-12
5. Enhancement of the Stark effect in AlInAs/GaInAs coupled quantum wells and their application to tunable midinfrared photodetectors;Journal of Applied Physics;1994-09
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