Inhomogeneous distribution of manganese atoms in ferromagnetic ZnSnAs2:Mn thin films on InP revealed by three-dimensional atom probe investigation
Author:
Affiliation:
1. Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka 940-2188, Japan
2. Toshiba Nanoanalysis Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4914065
Reference17 articles.
1. Theory of ferromagnetic (III,Mn)V semiconductors
2. Dilute ferromagnetic semiconductors: Physics and spintronic structures
3. First-principles theory of dilute magnetic semiconductors
4. MBE growth of Mn-doped ZnSnAs2 thin films
5. Anomalous Hall Effect and Magnetoresistance in Mn-Doped ZnSnAs2Epitaxial Film on InP Substrates
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1. Spatial distribution of substitutional Mn-As clusters in ferromagnetic (Zn,Sn,Mn)As2 thin films revealed by image reconstruction of atom probe tomography data;Journal of Applied Physics;2019-02-21
2. Control of conduction type in ferromagnetic (Zn,Sn,Mn)As2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction;Journal of Crystal Growth;2018-04
3. Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration;Journal of Applied Physics;2018-01-18
4. First-principles study of ZnSnAs2-based dilute magnetic semiconductors;Japanese Journal of Applied Physics;2018-01-16
5. Antiferromagnetic-ferromagnetic phase transition in (Zn,Sn,Mn)As2 epitaxial thin films;Applied Physics Letters;2017-03-27
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