Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces-Reference-Cited by-同舟云学术

Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces

Published:2012-04-15 Issue:8 Volume:111 Page:083507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kamiyama Eiji,Sueoka Koji,Vanhellemont Jan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4703911

Reference31 articles.

1. The mechanism of swirl defects formation in silicon

2. Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon

3. Formation of Grown-in Defects during Czochralski Silicon Crystal Growth

4. Point Defect Dynamics and the Oxidation‐Induced Stacking‐Fault Ring in Czochralski‐Grown Silicon Crystals

5. T. Saishoji, K. Nakamura, H. Nakajima, T. Yokoyama, F. Ishikawa, and J. Tomioka, High Purity Silicon V, edited by V. C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stalhofer, and H. J. Dawson (Electrochemical Society, Pennington, NJ, 1998), p. 28.

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigating Si (100) surface patterns as well as electrical states through integrating molecular dynamics simulations with density functional tight binding at atomic level;Materials Today Communications;2024-06

2. Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation;Journal of Applied Physics;2021-09-28

3. Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon;The Journal of Physical Chemistry C;2021-07-19

4. Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation;Processes;2020-09-01

5. Subsurface diffusion in crystals and effect of surface permeability on the atomic step motion;Scientific Reports;2019-09-17