Effect of channel positioning on the 1∕f noise in silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2433772
Reference28 articles.
1. Bulk and surface 1/f noise
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5. Low-frequency noise properties of dynamic-threshold (DT) MOSFET's
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