Affiliation:
1. Department of Physics, Prairie View A&M University , Prairie View, Texas 77446, USA
Abstract
An almost ideal two-dimensional system of electrons can now be easily created in semiconductor heterojunctions. The quantum Hall effect state of the electrons is induced via the application of a strong perpendicular magnetic under specific quantum conditions. The most robust integer and/or fractional quantum Hall states already observed show the expected characteristic magnetoresistance for such systems. However, anisotropic patterns and features in transport properties have been seen for a few other peculiar cases. The origin of such anisotropic patterns may have various mechanisms or may also be due the specific details of the system and material such as the isotropic or anisotropic nature of the effective mass of electrons, the nature of the host substrate parameters, the nature of the interaction potentials, as well as other subtler effects. The interplay between all these factors can lead to many outcomes. In this work we consider small quantum Hall states of electrons at filling factor 1/6 and study the appearance of such anisotropic patterns as a result of some form of innate interaction anisotropy in the system.
Funder
Directorate for Mathematical and Physical Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献