The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization-Reference-Cited by-同舟云学术

The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization

Published:2016-09-07 Issue:9 Volume:120 Page:095305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zou Jianxiong¹,Liu Bo¹,Jiao Guohua²³,Lu Yuanfu²³,Dong Yuming²³,Li Qiran⁴

Affiliation:

1. Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, People's Republic of China

2. Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China

3. The Chinese University of Hong Kong, Hong Kong, People's Republic of China

4. Institut d'Electronique Fondamentale, CNRS-Université Paris Sud UMR 8622, 91405 Orsay, France

Funder

Shenzhen Engineering Laboratory Project

Shenzhen Industry Development Fund Project

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962011

Reference26 articles.

1. Copper Metallization for High Performance Silicon Technology

2. Structure and thermal stability of graded Ta–TaN diffusion barriers between Cu and SiO2

3. Comparative study of Ta, TaN and Ta/TaN bi-layer barriers for Cu-ultra low-k porous polymer integration

4. Microstructure of amorphous tantalum nitride thin films

5. Thermal stability of Cu/α-Ta/SiO2/Si structures

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