Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1473861
Reference10 articles.
1. High reliability InGaP/GaAs HBT
2. Advanced heterostructure transistor technologies for wireless communications
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4. Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/Ny base layers
5. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor
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1. Comparative Studies on InGaP/GaAs Heterostructure-Emitter Bipolar Transistors with Tunneling- and Superlattice-Confinement Structures;Journal of The Electrochemical Society;2011
2. Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure;Microelectronics Journal;2007-06
3. Influence of spacer layer on InP/InGaAs δ-doped heterojunction bipolar transistors;Materials Chemistry and Physics;2005-06
4. High-performance InP/InGaAs pnp δ-doped heterojunction bipolar transistor;The European Physical Journal Applied Physics;2005-04-14
5. Analysis of improved dc and ac performances of an InGaP/GaAs heterojunction bipolar transistor with a graded AlxGa1−xAs layer at emitter/base heterojunction;Solid-State Electronics;2004-07
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