Quantum‐confined field‐effect light emitters with high‐speed switching capability
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101680
Reference6 articles.
1. Quantum Mechanical Size Effect Modulation Light Sources -- A New Field Effect Semiconductor Laser or Light Emitting Device
2. Transient Response of Photoluminescence for Electric Field in a GaAs/Al0.7Ga0.3As Single Quantum Well: Evidence for Field-Induced Increase in Carrier Life Time
3. Switching of photoluminescence by pulsed electric field in GaAs/Al<inf>0.7</inf>Ga<inf>0.3</inf>As single quantum well structure
4. Dynamic Switching Characteristics of Photoluminescence by an Electric Field in AlGaAs Quantum Well Structures
5. Operation principle of the InGaAsP/InP laser transistor
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1. InAs/GaSb-based lateral current injection laser;Journal of Applied Physics;2001-12
2. Experimental investigation of physical mechanisms underlying lateral current injection laser operation;Applied Physics Letters;1998-07-20
3. OEIC-enabling LCI lasers with current guides: combined theoretical-experimental investigation of internal operating mechanisms;IEEE Journal of Quantum Electronics;1998-07
4. Physical model of OEIC-compatible lateral current injection lasers;IEEE Journal of Selected Topics in Quantum Electronics;1997-04
5. Transverse-Electric and Transverse-Magnetic Mode Switching in Tensile-Strained Quantum-Well Lasers Induced by the Quantum-Confined Stark Effect;Japanese Journal of Applied Physics;1995-08-30
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