Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126586
Reference21 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. InGaAs-GaAs quantum-dot lasers
3. 1.3 μm room-temperature GaAs-based quantum-dot laser
4. Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)
5. Critical layer thickness for self-assembled InAs islands on GaAs
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2. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy;Journal of Crystal Growth;2017-11
3. A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructures;Superlattices and Microstructures;2013-05
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