The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3118574
Reference19 articles.
1. Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films
2. Field-induced resistive switching based on space-charge-limited current
3. Influence of chemical disorder on electrical switching in chalcogenide glasses
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5. Electronics using hybrid-molecular and mono-molecular devices
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