Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication-Reference-Cited by-同舟云学术

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Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication

Published:1997-11-10 Issue:19 Volume:71 Page:2812-2814
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lubben D.,Eres G.,Jellison G. E.,Westbrook R. D.,Wood R. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.120194

Reference9 articles.

1. Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4

2. Plasma‐enhanced chemical vapor deposition ofinsitudoped epitaxial silicon at low temperatures. II. Boron doping

3. Plasma‐enhanced chemical vapor deposition ofinsitudoped epitaxial silicon at low temperatures. I. Arsenic doping

4. Ion–surface interactions in low temperature silicon epitaxy by remote plasma enhanced chemical–vapor deposition

5. The effect of deposition rate on the growth of epitaxial Ge on GaAs (100)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Free jets in vacuum technologies;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-07

2. Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth;Critical Reviews in Solid State and Materials Sciences;1998-12

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