A molecular dynamics study of tilt grain boundary resistance to slip and heat transfer in nanocrystalline silicon-Reference-Cited by-同舟云学术

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A molecular dynamics study of tilt grain boundary resistance to slip and heat transfer in nanocrystalline silicon

Published:2014-12-28 Issue:24 Volume:116 Page:244309
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Chen Xiang¹,Xiong Liming²,Chernatynskiy Aleksandr³,Chen Youping¹

Affiliation:

1. Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611, USA

2. Department of Aerospace Engineering, Iowa State University, Ames, Iowa 50011, USA

3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4905248

Reference43 articles.

1. Vibrations and thermal transport in nanocrystalline silicon

2. Deformation mechanisms of Σ = 9 bicrystals of silicon

3. Dislocations stopped by the Σ = 9 (122 ) grain boundary in Si. An HREM study of thermal activation

4. Plasticity of a silicon bicrystal: a HREM study

5. INTERACTION OF DISLOCATIONS WITH GRAIN BOUNDARIES

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