The temperature dependence of the anomalous Hall effects inp‐type HgCdTe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342975
Reference33 articles.
1. Electrical transport properties of semiconducting CdxHg1-xTe alloys
2. Anomalous Electrical Properties ofp‐Type Hg1−xCdxTe
3. Carrier freeze-out and acceptor energies in p-type Hg1−xCdxTe
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2. Spin-related magnetoresistance oscillations in the inversion layer on bulk p-Hg1−xCdxTe;Journal of Applied Physics;2011-06
3. Incorporation and activation of arsenic in MBE-grown HgCdTe;Semiconductor Science and Technology;2007-12-12
4. Doping control in HgCdTe epitaxial layers;SPIE Proceedings;2003-10-21
5. Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy;Applied Physics Letters;1998-08-03
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