Atomic structure of a Ni diffused Si (001) surface layer: Precursor to formation of NiSi2 at low temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3294691
Reference16 articles.
1. Selective growth of metal‐rich silicide of near‐noble metals
2. First phase nucleation in silicon–transition‐metal planar interfaces
3. Towards implementation of a nickel silicide process for CMOS technologies
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