High‐speed photoconductivity and infrared to visible up‐conversion in GaP light‐emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95390
Reference7 articles.
1. Infrared to visible up‐conversion using GaP light‐emitting diodes
2. Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTe
3. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
4. The “Quasidirect” Radiative Recombination of Free Holes at Neutral Shallow Donors in GaP
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoconductive infrared excitation spectrum of GaP diode wafers and application as an infrared imaging system;International Journal of Infrared and Millimeter Waves;1987-11
2. Far-infrared detection by GaAs-IREDs and GaAs0.6P0.4-LEDs;International Journal of Infrared and Millimeter Waves;1986-09
3. Efficiency of a high pressure CO<inf>2</inf>laser pumped CH<inf>3</inf>F Raman laser;IEEE Journal of Quantum Electronics;1986-07
4. Saturation behavior of extrinsic photoconductivity in GaP light emitting diodes at high infrared intensities;International Journal of Infrared and Millimeter Waves;1986-01
5. High-speed infrared-to-visible up-conversion by free-to-bound transitions in GaP light emitting diodes;Journal of Physics D: Applied Physics;1985-11-14
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