Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study-Reference-Cited by-同舟云学术

Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study

Published:2015-03-28 Issue:12 Volume:117 Page:125308
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kolobov A. V.¹,Fons P.¹,Krbal M.²,Tominaga J.³,Giussani A.⁴^ORCID,Perumal K.⁴,Riechert H.⁴,Calarco R.⁴,Uruga T.⁵

Affiliation:

1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan and Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Mikazuki, Hyogo 679-5198, Japan

2. Faculty of Chemical Technology, Center of Materials and Nanotechnologies (CEMNAT), University of Pardubice, Legions Square 565, 530 02 Pardubice, Czech Republic

3. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan

4. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

5. Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Mikazuki, Hyogo 679-5198, Japan

Funder

European fund of the regional development and the state budget of the Czech republic

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4916529

Reference37 articles.

1. Chalcogenides

2. Understanding the phase-change mechanism of rewritable optical media

3. Structural basis for the fast phase change of Ge2Sb2Te5: Ring statistics analogy between the crystal and amorphous states

4. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materialsGe2Sb2Te5and GeTe

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4. Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge2Sb2Te5;RSC Advances;2021

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