Optimal asymmetry of transistor-based terahertz detectors-Reference-Cited by-同舟云学术

Optimal asymmetry of transistor-based terahertz detectors

Published:2021-10-18 Issue:16 Volume:119 Page:163505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shabanov Aleksandr¹^ORCID,Moskotin Maxim¹,Belosevich Vsevolod²³^ORCID,Matyushkin Yakov¹³,Rybin Maxim⁴^ORCID,Fedorov Georgy¹^ORCID,Svintsov Dmitry¹^ORCID

Affiliation:

1. Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia

2. Physics Department, Moscow State Pedagogical University, Moscow 119435, Russia

3. National Research University Higher School of Economics, Moscow 101000, Russia

4. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow 119991, Russia

Funder

Russian Science Foundation

Russian Foundation for Basic Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0063870

Reference41 articles.

1. The 2017 terahertz science and technology roadmap

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4. Optimization of the Design of Terahertz Detectors Based on Si CMOS and AlGaN/GaN Field-Effect Transistors

5. A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna

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