Electronic properties of ultrathin HfO2, Al2O3, and Hf–Al–O dielectric films on Si(100) studied by quantitative analysis of reflection electron energy loss spectra-Reference-Cited by-同舟云学术

Electronic properties of ultrathin HfO2, Al2O3, and Hf–Al–O dielectric films on Si(100) studied by quantitative analysis of reflection electron energy loss spectra

Published:2006-10-15 Issue:8 Volume:100 Page:083713
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jin Hua,Oh Suhk Kun,Kang Hee Jae,Tougaard Sven

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2360382

Reference25 articles.

1. Electron Energy-Loss Spectroscopy in the Electron Microscope

2. Reflection electron-energy-loss investigation of the electronic and structural properties of palladium

3. Kramers-Kronig analysis of reflection electron-energy-loss spectra measured with a cylindrical mirror analyzer

4. Optical properties of metal surfaces from electron energy loss spectroscopy in the reflection mode

5. Differential cross sections for plasmon excitations and reflected electron-energy-loss spectra

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