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12 GHz spontaneous optical bandwidth tunnel junction light-emitting transistor

Published:2019-10-28 Issue:18 Volume:115 Page:181102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wu Cheng-Han¹,Wu Chao-Hsin¹²^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, 1, Roosevelt Road, Sec.4, Taipei 106, Taiwan

2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec.4, Taipei 106, Taiwan

Funder

Ministry of Science and Technology, Taiwan

National Taiwan University

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5124959

Reference11 articles.

1. Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

2. Quantum-well-base heterojunction bipolar light-emitting transistor

3. 4.3 GHz optical bandwidth light emitting transistor

4. Laser operation of a heterojunction bipolar light-emitting transistor

5. Tunnel junction transistor laser

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2. Trapping/detrapping induced negative differential resistance in Cu/Ni:ZnO/InGa Schottky diode;2021 18th International Multi-Conference on Systems, Signals & Devices (SSD);2021-03-22

3. Coexistence of room-temperature negative differential resistance, negative photoconductivity modulated by UV light intensity and optical switching in Cu/Ni:ZnO/InGa structure;Journal of Alloys and Compounds;2021-01

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