Affiliation:
1. State Key Lab of Modern Optical Instrumentation, Centre for Optical and Electromagnetic Research, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China
Abstract
Temperature management in modern instruments is often a great task, particularly for silicon chip technologies against the background of the ever-increasing demanding for larger scale and higher density electronics integration. Enormous efforts have been made to solve this long-pending issue, mostly relying on active equipment that consume more energy and more space. Here, a compact thermal management technique for silicon chips is proposed, which is able to passively maintain the operation temperature of targets within a wide range of input power. The core part is a self-adaptive near-field thermal radiation system made of a phase-changeable metasurface and graphene/hBN heterostructure with surface plasmon/phonon modes. Numerically, we show that integrated with such a setup, a 0.1-mm thick silicon substrate could automatically maintain its operation temperature within a narrow window (∼333 ± 7 K) when loaded with heat power varied in 0.1–1 W cm−2. As a comparison, the temperature will change 614 or 319 K for a bare or blackbody-coated silicon substrate. The dynamic process of thermal homeostasis is discussed by using the transient thermal equation. The results imply that the current design is suitable for providing a compact, conformal thermal functional coat to passively manage temperatures of heated electronic components, particularly in vacuum.
Funder
China National Funds for Distinguished Young Scientists
National Key Research and Development Program of China
Fundamental Research Funds for Central Universities of the Central South University
Subject
General Physics and Astronomy
Cited by
1 articles.
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