Temperature dependent double blueshift of photoluminescence peak position in MgZnO epitaxial layers-Reference-Cited by-同舟云学术

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Temperature dependent double blueshift of photoluminescence peak position in MgZnO epitaxial layers

Published:2014-09-28 Issue:12 Volume:116 Page:123501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Karaliunas Mindaugas¹²,Kuokstis Edmundas¹,Ting Shao-Ying³,Huang Jeng-Jie³,Yang C. C.³

Affiliation:

1. Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Sauletekio ave. 9-III, LT-10222 Vilnius, Lithuania

2. Baltic Institute of Advanced Technology, Sauletekio ave. 15, LT-10224 Vilnius, Lithuania

3. Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Sec. 4, Roosevelt rd., Taipei 10617, Taiwan

Funder

Lietuvos Mokslo Taryba (Research Council of Lithuania)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896268

Reference30 articles.

1. A comprehensive review of ZnO materials and devices

2. Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films

3. Variable band gap ZnO nanostructures grown by pulsed laser deposition

4. Structural and optical properties of Zn(Mg,Cd)O alloy films grown by remote-plasma-enhanced MOCVD

5. Optical and structural properties of epitaxial MgxZn1−xO alloys

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3. Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate;Semiconductor Science and Technology;2021-04-13

4. Promising lanthanide-doped BiVO4 phosphors for highly efficient upconversion luminescence and temperature sensing;Dalton Transactions;2021

5. Tailoring microstructure and optical properties of MgZnO film on glass by substrate temperature;Materials Letters;2020-11

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