Properties of amorphous GaNx prepared by ion beam assisted deposition at room temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1555258
Reference22 articles.
1. Can Amorphous GaN Serve as a Useful Electronic Material?
2. Density dependence of the structural and electronic properties of amorphous GaN
3. Reactive sputtering of gallium nitride thin films for GaAs MIS structures
4. Photoconductive a-GaN prepared by reactive sputtering
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