High-resolution electron microscopy study of tunnelling junctions with AlN and AlON barriers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1357835
Reference8 articles.
1. Spin polarized tunneling in ferromagnetic junctions
2. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
3. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
4. Influence of the Sputtering Parameters on the Properties of A12O3 and Ain Insulators in Spin Tunneling Junctions
5. Geometrically enhanced magnetoresistance in ferromagnet–insulator–ferromagnet tunnel junctions (abstract)
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1. Effect of oxidation and annealing on tunnel barrier structure and composition in IrMn/CoFe/TiOx/CoFe magnetic tunnel junctions;Journal of Applied Physics;2009-12-15
2. Chapter One Spin-Dependent Tunneling in Magnetic Junctions;Handbook of Magnetic Materials;2007
3. The formation mechanism of aluminium oxide tunnel barriers;Journal of Materials Science;2006-12
4. Effect of nitrogen incorporation to oxidation process on the reliability of magnetic tunnel junctions;IEEE Transactions on Magnetics;2006-01
5. The formation mechanism of aluminum oxide tunnel barriers: Three-dimensional atom probe analysis;Journal of Applied Physics;2005-12-15
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