Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition-Reference-Cited by-同舟云学术

Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition

Published:2016-02-21 Issue:7 Volume:119 Page:075702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ma Zhongyuan¹²³⁴,Wang Wen¹²³⁴,Yang Huafeng¹²³⁴,Jiang Xiaofan¹²³⁴,Yu Jie¹²³⁴,Qin Hua⁵,Xu Ling¹²³⁴,Chen Kunji¹²³⁴,Huang Xinfan¹²³⁴,Li Wei¹²³⁴,Xu Jun¹²³⁴,Feng Duan¹²³⁴

Affiliation:

1. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

2. School of Electric Science and Engineer, Nanjing University, Nanjing 210093, China

3. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

4. Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China

5. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

Funder

the Research Fund for Doctoral Program of Higher Education of China

the Stat Key Development Program for Basic Research

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942160

Reference22 articles.

1. Control of the nucleation density of Si quantum dots by remote hydrogen plasma treatment

2. Control of electronic charged states of Si-based quantum dots for floating gate application

3. A silicon nanocrystals based memory

4. Gated Decap: Gate Leakage Control of On-Chip Decoupling Capacitors in Scaled Technologies

5. PCMO Device With High Switching Stability

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4. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors;Nanotechnology;2017-04-04