Experimental investigation and modeling of diffusion in the InP/(In,Ga)As heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
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1. Migration barriers for diffusion of As and P atoms in InP and InAs via vacancies and interstitial atoms;Acta Materialia;2024-05
2. The effect of different proximity caps on quantum well intermixing in InGaAsP/InP QW structures;Semiconductor Science and Technology;2006-05-23
3. High-performance phase and amplitude modulators based on GaInAsP stepped quantum wells;SPIE Proceedings;2004-08-03
4. Enhanced electro-optic effect in GaInAsP–InP three-step quantum wells;Applied Physics Letters;2004-03-15
5. Analytical electron microscopy of InP/(In, Ga)As heterogeneous structures;Materials Chemistry and Physics;2003-08
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