Electric field-dependent photoexcited spin-polarized electron transport in Bi2Se3 topological insulator

Abstract

Three-dimensional (3D) topological insulators (TIs) exhibit spin-polarized surface states in which the spin of electrons is locked to their momentum. The helical surface states can be explored from circularly polarized light-induced spin photocurrent, a phenomenon called circular photogalvanic effect (CPGE). In this work, we fabricate a TI transistor with the Bi2Se3 channel layer synthesized using vapor deposition. The photocurrent response of Bi2Se3 TI is characterized under horizontal and longitudinal electric fields. CPGE and linear photogalvanic effect (LPGE) contribute to the surface state photocurrent at room temperature. The longitudinal electric field provides kinetic energy to the electrons so that the transition of electrons to higher energy bands in momentum space occurs. Under a photon excitation with the energy far above the TI bandgap, we observed a photocurrent difference between left and right circularly polarized light excitation. The photocurrent variation with gate voltage (longitudinal field) is also investigated. Adjusting the Fermi level with the gate bias leads to changes in the population of bulk state carriers and spin electrons in surface states. By shifting the gate bias toward negative, the CPGE current increases because of the reduced scattering with bulk carriers. Our work reveals that longitudinal and horizontal electric fields can manipulate the helical spin-polarized photocurrent of Bi2Se3. From the asymmetry of circularly polarized photoconductive differential current (CPDC) under the horizontal field, we found evidence of spin-polarized electron transition to other conduction band valleys at room temperature under a high-energy photon excitation.