Structural and optical study of Ce segregation in Ce-doped SiO1.5 thin films-Reference-Cited by-同舟云学术

Structural and optical study of Ce segregation in Ce-doped SiO1.5 thin films

Published:2015-12-21 Issue:23 Volume:118 Page:234308
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Beainy G.¹,Weimmerskirch-Aubatin J.²,Stoffel M.²,Vergnat M.²^ORCID,Rinnert H.²,Castro C.¹,Pareige P.¹,Talbot E.¹

Affiliation:

1. Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Normandie Université, Avenue de l'Université, BP 12, 76801 St Etienne du Rouvray, France

2. Université de Lorraine, UMR CNRS 7198, Institut Jean Lamour, BP 70239, 54506 Vandoeuvre-lès-Nancy, France

Funder

Conseil Régional de Haute Normandie (Upper Normandy Regional Council)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4938061

Reference31 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Optical gain in silicon nanocrystals

3. Dynamics of stimulated emission in silicon nanocrystals

4. 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+

5. Strong exciton-erbium coupling in Si nanocrystal-doped SiO2

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