Effect of intrinsic defects on the electron mobility of gallium arsenide grown by molecular beam epitaxy and metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
1. Degradation of mobility in neutron irradiated GaAs by the increased scattering from multiply charged ionized defects
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5. Formation of EL2, AsGaand U band in irradiated GaAs: Effects of annealing
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