Optimizing electron injection barriers and hole-trapping ability for high-performance photomultiplication-type ternary organic photodetectors

Abstract

Photomultiplication-type organic photodetectors (PM-OPDs) have been stimulating more and more researchers' interest owing to their extremely high external quantum efficiency (EQE). To prepare high-performance PM-OPDs with a broadband spectral response range from visible to near-infrared and investigate the role of energy levels of the donor and acceptor on its responsiveness, the non-fullerene acceptor Y6 was added into the P3HT:PC71BM system in this work. The photomultiplication phenomenon with the highest EQE has been achieved under both forward and reverse bias when the ratio of Y6 in two acceptors approaches 80 wt. %. The introduction of Y6 not only promotes the formation of moderate hole traps in the active layer but also results in an appropriate amount of low injection barriers to allow more electron injection from the external circuit. Therefore, the spectral response of the device with 80 wt. % Y6 has been broadened from 750 to 950 nm, and the champion EQE of 15 691% at 10 V and 7639% at −20 V at 850 nm was achieved. This work reveals the importance of hole-trapping ability determined by the energy level difference between the donor and the acceptor for the selection of the multiplication system and provides a scheme for the design of high-performance broadband PM-OPDs.