Distinguishing the impact of oxidation on the Josephson junction oxide barrier through the 1/f behavior

Author:

Chen Yong12ORCID,Duan Peng12ORCID,Jia Zhi-Long12,Yang Xin-Xin12ORCID,Du Lei12,Tao Hao-Ran12ORCID,Zhang Chi12ORCID,Guo Liang-Liang12ORCID,Zhang Hai-Feng12ORCID,Wang Tian-Le12ORCID,Zhao Ze-An12ORCID,Yang Xiao-Yan12ORCID,Zhang Sheng12,Zhao Ren-Ze12ORCID,Wang Peng12ORCID,Kong Wei-Cheng3,Guo Guo-Ping123ORCID

Affiliation:

1. CAS Key Laboratory of Quantum Information, University of Science and Technology of China 1 , Hefei, Anhui 230026, China

2. CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China 2 , Hefei, Anhui 230026, China

3. Origin Quantum Computing Company Limited 3 , Hefei, Anhui 230026, China

Abstract

The quality of the oxide barrier in Josephson junctions (JJs) is crucial for devices with it as the core structure. Despite the critical nature of the oxidation process in JJ fabrication, there remains a lack of systematic research on its impact. Our study aims to fill this gap by comprehensively investigating the influence of oxidation parameters and methods on the oxide barrier quality. To achieve this, we evaluate the low-frequency 1/f noise of JJs produced using various fabrication processes. Our findings demonstrate that a weak oxidation strength (oxygen pressure × exposure time) and a dynamic oxidation method contribute positively to the formation of high-quality oxide barriers. This research provides an important reference for optimizing the oxidation process.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

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