Negative longitudinal resistance of monolayer graphene in the quantum Hall regime

Author:

Kaverzin Alexey A.12ORCID,Daimon Shunsuke123ORCID,Kikkawa Takashi1ORCID,Ohtsuki Tomi4ORCID,Saitoh Eiji125ORCID

Affiliation:

1. Department of Applied Physics, The University of Tokyo 1 , Tokyo 113-8656, Japan

2. Institute for AI and Beyond, The University of Tokyo 2 , Tokyo 113-8656, Japan

3. Quantum Materials and Applications Research Center, National Institutes for Quantum Science and Technology 3 , Tokyo 152-8552, Japan

4. Physics Division, Sophia University 4 , Chiyoda, Tokyo 102-8554, Japan

5. WPI Advanced Institute for Materials Research, Tohoku University 5 , Sendai 980-8577, Japan

Abstract

In the quantum Hall regime, the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero 4-terminal longitudinal resistance rxx. Finite scattering between the counter-propagating edge states, when the topological protection is broken, commonly results in rxx > 0. However, a local disorder, if allowing intersection of the edge states, can result in a counter-intuitive scenario when rxx < 0. In this work, we report the observation and a systematic study of such unconventional negative longitudinal resistance seen in an encapsulated monolayer graphene Hall bar device measured in the quantum Hall regime. We supplement our findings with the numerical calculations, which allow us to outline the conditions necessary for the appearance of negative rxx and to exclude the macroscopic disorder (contamination bubble) as the main origin of it.

Funder

JST-CREST

Grant-in-Aid for Scientific Research

Grant-in-Aid for Transformative Research Areas

Publisher

AIP Publishing

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