β-Ga2O3 Bulk Growth Techniques-Reference-Cited by-同舟云学术

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β-Ga2O3 Bulk Growth Techniques

Published:2023 Issue: Volume: Page:1-26
ISSN:
Container-title:Ultrawide Bandgap β-Ga2O3 Semiconductor
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Author:

Blevins J. D.¹,Thomson Darren²

Affiliation:

1. Principal Materials Engineer, Air Force Research Laboratory Materials and Manufacturing Directorate, AFRL/RXME, 2977 Hobson Way, Wright-Patterson AFB, Ohio 45433, USA

2. Senior Materials Research Engineer, Air Force Research Laboratory, Sensors Directorate, 2241 Avionics Circle, Bldg. 600, Wright-Patterson AFB, Ohio 45433

Publisher

AIP Publishing

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparative study of optical property on unintentionally doped and Sn-Doped β-Ga2O3 crystals by EFG method with a cylindrical Ir die;Results in Physics;2024-09

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