Electrical properties of laser annealed AuGe/GaAs ohmic contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328666
Reference5 articles.
1. Ohmic contacts on n-GaAs produced by laser alloying of Ge films
2. Laser annealing of ohmic contacts on GaAs
3. Selective etching of Au-Ge alloy films on GaAs
4. Specific contact resistance of metal-semiconductor barriers
5. Metal-N-type semiconductor ohmic contact with a shallow N+ surface layer
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Highly Reliable WGe Ohmic Contact to GaAs-AlGaAs HBTs;MRS Proceedings;1992
2. Development of ohmic contact materials for GaAs integrated circuits;Materials Science Reports;1990-01
3. Other Metal–Semiconductor Contact Systems;VLSI Electronics Microstructure Science;1986
4. Transient annealing of semiconductors by laser, electron beam and radiant heating techniques;Reports on Progress in Physics;1985-08-01
5. Formation, microstructure et résistances des contacts AuGe/n-GaAs, AuGe/n-InP, AuZn/p-InP et AuBe/p-InP;Thin Solid Films;1985-05
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