Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation-Reference-Cited by-同舟云学术

Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation

Published:1998-03-15 Issue:6 Volume:83 Page:3323-3336
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Herzinger C. M.,Johs B.,McGahan W. A.,Woollam J. A.,Paulson W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.367101

Reference24 articles.

1. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

2. Optical functions of silicon determined by two-channel polarization modulation ellipsometry

3. Spectroscopic immersion ellipsometry study of the mechanism of Si/SiO2 interface annealing

4. Spectroscopic immersion ellipsometry study of the mechanism of Si/SiO2 interface annealing

5. Applications of spectroscopic ellipsometry to microelectronics

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