Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367101
Reference24 articles.
1. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
2. Optical functions of silicon determined by two-channel polarization modulation ellipsometry
3. Spectroscopic immersion ellipsometry study of the mechanism of Si/SiO2 interface annealing
4. Spectroscopic immersion ellipsometry study of the mechanism of Si/SiO2 interface annealing
5. Applications of spectroscopic ellipsometry to microelectronics
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