Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122258
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1. Origin of temperature-induced luminescence peak shifts from semipolar (112¯2) InxGa1−xN quantum wells;Physical Review B;2017-09-18
2. Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency;Physical Review Applied;2017-07-27
3. Band alignment and excitonic localization of ZnO/Cd0.08Zn0.92O quantum wells;Journal of Applied Physics;2010-05
4. Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition;Journal of Applied Physics;2008-11
5. GaInN∕GaN growth optimization for high-power green light-emitting diodes;Applied Physics Letters;2004-08-09
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