Auger recombination in In(Ga)Sb/InAs quantum dots-Reference-Cited by-同舟云学术

Auger recombination in In(Ga)Sb/InAs quantum dots

Published:2015-01-05 Issue:1 Volume:106 Page:013103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zabel T.¹,Reuterskiöld Hedlund C.¹,Gustafsson O.¹,Karim A.²,Berggren J.¹,Wang Q.²,Ernerheim-Jokumsen C.¹,Soldemo M.¹,Weissenrieder J.¹,Götelid M.¹,Hammar M.¹

Affiliation:

1. School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista, Sweden

2. Acreo AB, Electrum 236. 16440 Kista, Sweden

Funder

Göran Gustafsson Foundation

Swedish Foundation for Strategic Research (SSF)

VINNOVA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905455

Reference28 articles.

1. Material considerations for third generation infrared photon detectors

2. Temperature dependence of the energy gap of InSb using nonlinear optical techniques

3. Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers

4. Proposal for strained type II superlattice infrared detectors

5. MBE grown type-II MWIR and LWIR superlattice photodiodes

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