Absorption and photoluminescence spectra of the diluted magnetic semiconductor Ga1−xFexSb
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373756
Reference9 articles.
1. Epitaxy of III–V diluted magnetic semiconductor materials
2. Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAs
3. Transport properties and origin of ferromagnetism in (Ga,Mn)As
4. Variation of band gap with Mn concentration in Ga1−xMnxSb — A new III–V diluted magnetic semiconductor
5. Synthesis and growth of Ga1−xFexSb, a new III–V diluted magnetic semiconductor
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2. Effect of magnetic dilution in Zn1−xMnxGa2Se4 (0;Journal of Applied Physics;2005-07
3. The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N;Journal of Crystal Growth;2004-02
4. The Micro-Magnetic Structures of Mn+Ion-Implanted GaSb;Japanese Journal of Applied Physics;2003-06-15
5. (Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition;Journal of Crystal Growth;2003-05
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