Molecular‐beam epitaxial growth of InSb/CdTe heterojunctions for multilayer structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341737
Reference10 articles.
1. On the properties of InSb quantum wells
2. Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)
3. Properties of CdTe/InSb heterostructures prepared by molecular beam epitaxy
4. Microstructural studies of CdTe and InSb films grown by molecular beam epitaxy
5. Molecular beam epitaxy of InSb films on CdTe
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2. Molecular beam epitaxial re-growth of CdTe, CdTe/CdMgTe and CdTe/CdZnTe double heterostructures on CdTe/InSb(1 0 0) substrates with As cap;Journal of Crystal Growth;2015-09
3. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy;Applied Physics Letters;2013-11-04
4. Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors;Journal of Electronic Materials;2008-05-01
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