α,ω-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors-Reference-Cited by-同舟云学术

α,ω-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors

Published:2016-02-15 Issue:7 Volume:108 Page:073301
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schamoni Hannah¹,Noever Simon²,Nickel Bert²^ORCID,Stutzmann Martin¹^ORCID,Garrido Jose A.³⁴^ORCID

Affiliation:

1. Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany

2. Fakultät für Physik und CeNS, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany

3. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain

4. ICREA, Institució Catalana de Recerca i Estudis Avantçats, 08070 Barcelona, Spain

Funder

Nanosystems Initiative Munich (NIM)

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942407

Reference38 articles.

1. Biocompatible and Biodegradable Materials for Organic Field-Effect Transistors

2. Biocompatibility Studies of Functionalized Regioregular Poly(3-hexylthiophene) Layers for Sensing Applications

3. A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications

4. Development of organic thin film transistors based on flexible substrates

5. Flexible organic field effect transistors for biomedical microimplants using polyimide and parylene C as substrate and insulator layers

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