Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2716874
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1. Does source-to-drain tunneling limit the ultimate scaling of MOSFETs?
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5. MOS capacitance measurements for high-leakage thin dielectrics
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