Gatable ultrafast field‐assisted photoemission to λ=1.55 μm from In0.5Ga0.5As heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112566
Reference10 articles.
1. Field‐assisted photoemission to 2.1 microns from a Ag/p‐In0.77Ga0.23As photocathode
2. Transferred electron photoemission to 1.65 μ from an InGaAsP heterojunction cathode
3. Field‐assisted minority carrier electron transport across a p‐InGaAs/p‐InP heterojunction
4. Photoelectric imaging in the 0.9-1.6 micron range
5. Attenuation Length Measurements of Hot Electrons in Metal Films
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1. Theoretical study on the photoelectric emission spectra of a field-assisted Au–BaO thin film;Optik;2008-03
2. Theoretical study on the quantum yield spectra of a field-assisted Au–BaO thin film;Physics Letters A;2006-01
3. A new internal field-assisted photocathode based on Ag–O–Cs composite thin films;Solid State Communications;2002-06
4. Enhanced photoemission of Ag–O–Cs composite thin films with an internal electric field;Journal of Applied Physics;2001-02-15
5. Electrically gated field-assisted photoemission from caesiated metal-(AlGa)As heterostructures;Semiconductor Science and Technology;1995-04-01
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