Effect of oxygen defects on ferroelectric oxides: Correlation between linear and nonlinear dielectric responses

Author:

Cao Zixin1ORCID,Li Yawei1ORCID,Shang Liyan1ORCID,Jiang Kai12ORCID,Zhu Liangqing1ORCID,Zhang Jinzhong1ORCID,Hu Zhigao13ORCID

Affiliation:

1. Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University 1 , Shanghai 200241, China

2. School of Arts and Sciences, Shanghai Dianji University 2 , Shanghai 200240, China

3. Collaborative Innovation Center of Extreme Optics, Shanxi University 3 , Taiyuan 030006, China .

Abstract

Oxygen defects are introduced into PbZr0.5Ti0.5O3 films and their impact on ferroelectric behavior, linear dielectric response (LDR), and nonlinear dielectric response (NDR) is studied. Apart from a notable decrease in both polarization and LDR permittivity, the frequency spectra of LDR exhibit a distinctive loss peak. The peak position varies with temperature and oxygen defect concentration. NDR parameters, including the Rayleigh coefficient (α1), the slope (α2) correlating the imaginary part of permittivity with the ac electric field, and the slope (k) between the real and the imaginary parts of permittivity, demonstrate diverse behaviors in response to temperature and oxygen defect concentration. The similarity in the frequency spectra of tanδ and 1/k reveals the correlation between LDR and NDR induced by the presence of oxygen defects. These observations are attributed to the behavior of the single and composite defects associated with oxygen vacancies.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Program for Professor of Special Appointment

Fundamental Research Funds for the Central Universities

Publisher

AIP Publishing

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